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2SB744 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB744 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SB744 2SB744A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB744 -45 V(BR)CEO Collector-emitter breakdown voltage 2SB744A IC=-10mA; IB=0 -60 V VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.5 -2.0 V VBEsat Base-emitter saturation voltage IC=-1.5A ;IB=-0.15A -0.8 -2.0 V ICBO Collector cut-off current VCB=-45V; IE=0 -1 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 30 120 hFE-2 DC current gain IC=-0.5A ; VCE=-5V 60 100 320 fT Transition frequency IC=-0.1A ; VCE=-5V 45 MHz COB Collector output capacitance f=1MHz ; VCB=-10V;IE=0 60 pF hFE-2 Classifications R O Y 60-120 100-200 160-320 |
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