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DMN4036LK3-13 Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMN4036LK3-13 Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 8 page DMN4036LK3 Document Revision: 1 4 of 8 www.diodes.com July 2009 © Diodes Incorporated A Product Line of Diodes Incorporated DMN4036LK3 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 40 ⎯ ⎯ V ID = 250μA, VGS= 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS= 40V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS= ±20V, VDS= 0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) 1.0 ⎯ 3.0 V ID= 250μA, VDS= VGS Static Drain-Source On-Resistance (Note 7) RDS (ON) ⎯ ⎯ 0.036 Ω VGS= 10V, ID= 12A 0.061 VGS= 4.5V, ID= 6A Forward Transconductance (Notes 7 & 8) gfs ⎯ 19.6 ⎯ S VDS= 15V, ID= 12A Diode Forward Voltage (Note 7) VSD ⎯ 0.96 1.1 V IS= 12A, VGS= 0V Reverse recovery time (Note 8) trr 112 ⎯ ns IS= 12A, di/dt= 100A/μs Reverse recovery charge (Note 8) Qrr ⎯ 926 ⎯ nC DYNAMIC CHARACTERISTICS ( Note 8) Input Capacitance Ciss ⎯ 453 ⎯ pF VDS= 20V, VGS= 0V f= 1MHz Output Capacitance Coss ⎯ 79.1 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 40.5 ⎯ pF Total Gate Charge Qg ⎯ 4.9 ⎯ nC VGS= 4.5V VDS= 20V ID= 12A Total Gate Charge Qg ⎯ 9.2 ⎯ nC VGS= 10V Gate-Source Charge Qgs ⎯ 1.7 ⎯ nC Gate-Drain Charge Qgd ⎯ 2.7 ⎯ nC Turn-On Delay Time (Note 9) tD(on) ⎯ 3.2 ⎯ ns VDD= 20V, VGS= 10V ID= 12A, RG ≅ 6.0Ω Turn-On Rise Time (Note 9) tr ⎯ 11.7 ⎯ ns Turn-Off Delay Time (Note 9) tD(off) ⎯ 11.6 ⎯ ns Turn-Off Fall Time (Note 9) tf ⎯ 9.5 ⎯ ns Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing. 9. Switching characteristics are independent of operating junction temperatures. |
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