ZXMHC6A07N8

Issue 1.0 - March 2009

4

© Diodes Incorporated

www.diodes.com

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-Source breakdown

voltage

60

V

Zero Gate voltage Drain

current

0.5

µA

Gate-Body leakage

nA

Gate-Source threshold

voltage

1.0

3.0

V

Static Drain-Source

on-state resistance

(a)

0.25

0.35

Ω

Forward

Transconductance

(a) (c)

2.3

S

Dynamic

Capacitance

(c)

Input capacitance

166

pF

f= 1MHz

Output capacitance

19.5

pF

Reverse transfer

capacitance

8.7

pF

Switching

(b) (c)

Turn-on-delay time

1.8

ns

Rise time

1.4

ns

Turn-off delay time

4.9

ns

Fall time

2.0

ns

Gate charge

(c)

Total Gate charge

3.2

nC

Gate-Source charge

0.67

nC

Gate-Drain charge

0.82

nC

Source–Drain diode

Diode forward voltage

(a)

0.80

0.95

V

Reverse recovery time

(c)

20.5

ns

Reverse recovery charge

(c)

21.3

nC

NOTES:

(a) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%.

(b) Switching characteristics are independent of operating junction temperature.

(c) For design aid only, not subject to production testing