ZXMHC10A07N8 datasheet(8/11 Pages) DIODES

Part #	ZXMHC10A07N8

Description	100V SO8 Complementary enhancement mode MOSFET H-Bridge

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Manufacturer	DIODES [Diodes Incorporated]

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ZXMHC10A07N8

Issue 1.0 - March 2009

8

www.diodes.com

P-channel typical characteristics

0.1

1

10

1E-3

0.01

0.1

1

10

0.1

1

10

1E-3

0.01

0.1

1

10

34

5

0.01

0.1

1

-50

0

50

100

150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

0.01

0.1

1

10

1

10

100

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.1

1

10

10V

5V

4.5V

-VGS

3.5V

7V

4V

Output Characteristics

T = 25°C

-VGS

-VDS Drain-Source Voltage (V)

5V

4.5V

4V

3V

7V

10V

3.5V

Output Characteristics

T = 150°C

-VDS Drain-Source Voltage (V)

Typical Transfer Characteristics

-VDS = 10V

T = 25°C

T = 150°C

-VGS Gate-Source Voltage (V)

Normalised Curves v Temperature

RDS(on)

VGS = -10V

ID = - 0.6A

VGS(th)

VGS = VDS

ID = -250uA

Tj Junction Temperature (°C)

4.5V

10V

4V

5V

7V

3.5V

On-Resistance v Drain Current

T = 25°C

-VGS

-ID Drain Current (A)

T = 150°C

T = 25°C

Source-Drain Diode Forward Voltage

-VSD Source-Drain Voltage (V)

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