TRF7610PWP datasheet(7/11 Pages) TI

Part #	TRF7610PWP

Description	SILICON MOSFET POWER AMPLIFIER IC FOR GSM

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Manufacturer	TI [Texas Instruments]

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TRF7610

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B – MAY 1997 – REVISED AUGUST 1998

7

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 2

25

15

10

0

–20

–15

–10

–5

35

45

PI – Input Power – dBm

POWER ADDED EFFICIENCY

vs

INPUT POWER

50

05

10

40

30

20

5

Frequency = 900 MHz

VDD = 4.8 V

VPC = 3 V Pulsed

TA = –40°C

TA = 85°C

TA = 25°C

Figure 3

PI = 5 dBm

VDD = 4.8 V

VPC = 3 V Pulsed

TA = –40°C

TA = 85°C

TA = 25°C

30

25

15

5

850 860 870 880 890 900 910

40

50

f – Frequency – MHz

55

920 930 940 950

45

35

20

10

POWER ADDED EFFICIENCY

vs

FREQUENCY

Figure 4

30

20

10

5

2.5

3

3.5

4

4.5

40

50

60

5

5.5

6

TA = –40°C

TA = 85°C

TA = 25°C

POWER ADDED EFFICIENCY

vs

DRAIN VOLTAGE

Frequency = 900 MHz

PI = 5 dBm

VPC = 3 V Pulsed

VDD – Drain Voltage – V

Figure 5

TA = 85°C

TA = 25°C

POWER ADDED EFFICIENCY

vs

POWER CONTROL VOLTAGE

Frequency = 900 MHz

VDD = 4.8 V

PI = 5 dBm

TA = –40°C

25

15

5

–5

0

0.5

1

1.5

2

30

45

VPC – Power Control Voltage – V

50

2.5

3

40

35

20

10

0

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