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KTD2686 Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTD2686
Description  DARLINGTON TRANSISTOR
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Maker  KEC [KEC(Korea Electronics)]
Homepage  http://www.keccorp.com
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2004. 11. 22
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD2686
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
DARLINGTON TRANSISTOR.
SOLENOID DRIVER. MOTOR DRIVER.
FEATURES
High DC Current Gain
: hFE=2000(Min.) (VCE=2V, IC=1A)
MAXIMUM RATINGS (Ta=25
)
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
12
3
2. COLLECTOR (HEAT SINK)
A
C
K
F
MILLIMETERS
H
1. BASE
3. EMITTER
FF
D
+_
+_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=45V, IE=0
-
-
10
A
ICEO
VCE=45V, IB=0
-
-
10
A
Emitter Cut-off Current
IEBO
VEB=8V, IC=0
0.8
-
4
mA
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=10mA, IB=0
50
60
70
V
DC Current Gain
hFE
VCE=2V, IC=1A
2000
-
-
Collector-Emitter Saturation Voltage
VCE(sat)1
IC=0.5A, IB=1mA
-
-
1.2
V
VCE(sat)2
IC=1A, IB=1mA
-
-
1.5
Base-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=1mA
-
-
2.0
V
Switching
Time
Turn On Time
ton
CC
20
µs
5V
0V
1%
DUTY CYCLE <=
V
=30V
30
INPUT
OUTPUT
-
0.4
-
S
Storage Time
tstg
-
4.0
-
Fall Time
tf
-
0.6
-
Type Name
Lot No.
Marking
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
60
10
V
Emitter-Base Voltage
VEBO
8
V
Collector Current
DC
IC
1
A
Pulse
ICP
3
Base Current
IB
0.5
A
Collector Power
Dissipation
t=10S
PC *
2.5
W
DC
1
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55
150
* Pc : Package mounted on FR4 board (Cu area : 645
, glass epoxy, t=1.6
)
COLLECTOR
BASE
EMITTER
5k
300
−∼
−∼
EQUIVALENT CIRCUIT




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