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BQ24382DSGT Datasheet(PDF) 3 Page - Texas Instruments |
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BQ24382DSGT Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 18 page  ELECTRICAL CHARACTERISTICS bq24380 bq24381 bq24382 www.ti.com......................................................................................................................................................... SLUS805B – APRIL 2008 – REVISED MARCH 2009 Over junction temperature range -40°C ≤ TJ ≤ 125°C and recommended supply voltage (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IN Undervoltage lock-out, input power UVLO CE = LO or HI, VIN: 0 V → 3 V 2.5 2.8 V detected threshold Vhys(UVLO) Hysteresis on UVLO CE = LO or HI, VIN: 3 V → 0 V 200 300 mV CE = LO or HI. Time measured from tDGL(PGOOD) Deglitch time, input power detected status 8 ms VIN 0 V → 5 V 1-µs rise-time bq24380 250 CE = LO, no load on OUT pin, IDD Operating current bq24381 300 µA VIN = 5 V bq24382 300 ISTDBY Standby current CE = HI, VIN = 5.5 V 100 µA INPUT-TO-OUTPUT CHARACTERISTICS VDO Dropout voltage IN to OUT CE = LO, VIN = 5 V, I(OUT) = 1 A 280 mV IOFF Q1 off-state leakage current CE = HI, VIN = 5.5 V 10 µA INPUT OVERVOLTAGE PROTECTION bq24380 5.3 5.5 5.7 VO(REG) Output voltage CE = LO, VIN = 6 V bq24381 4.8 5 5.2 V bq24382 4.8 5 5.2 bq24380 6.1 6.3 6.5 VOVP Input overvoltage protection threshold CE = LO, VIN: 5 V → 8 V bq24831 6.88 7.1 7.31 V bq24382 10.17 10.5 10.83 CE = LO or HI, VIN: 7 V → 5 V bq24380 25 110 Vhys(OVP) Hysteresis on OVP bq24831 25 120 mV CE = LO or HI, VIN: 8 V → 5 V bq24382 150 300 tPD(OVP) (1) Input OV propagation delay VIN: 5 V → 10 V 200 ns CE = LO. Time measured from tREC(OVP) Recovery time from input overvoltage condition 8 ms VIN: 7 V → 5 V, 1-µs fall-time OUTPUT SHORT-CIRCUIT PROTECTION (only at start-up) IO(SC) Short-circuit detection threshold 3 V < VIN < VOVP - Vhys(OVP) 1.3 1.5 1.7 A tREC(SC) Retry interval if short-circuit detected 64 ms BATTERY OVERVOLTAGE PROTECTION BVOVP Battery overvoltage protection threshold VIN > 4.5 V, CE = LO 4.3 4.35 4.4 V Vhys(BVovp) Hysteresis on BV(OVP) VIN > 4.5 V, CE = LO 200 320 mV I(VBAT) Input bias current on VBAT pin TJ = 25°C 10 nA VIN > 4.5 V, CE = LO, Time measured from tDGL(BVovp) Deglitch time, battery overvoltage detected VVSAT rising from 4.1 V to 4.4 V to FAULT 176 µs going low. THERMAL PROTECTION TJ(OFF) Thermal shutdown temperature 140 150 °C TJ(OFF-HYS) Thermal shutdown hysteresis 20 °C LOGIC LEVELS ON CE VIL Logic LOW input voltage 0 0.4 V VIH Logic HIGH input voltage 1.4 V IIL 1 µA IIH VCE = 1.8 V 15 µA LOGIC LEVELS ON FAULT VOL Output LOW voltage ISINK = 5 mA 0.2 V Ilkg Off-state leakage current, HI-Z VFAULT = 5 V 10 µA (1) Not tested. Specified by design Copyright © 2008–2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): bq24380 bq24381 bq24382 |
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