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TPS23754PWPR Datasheet(PDF) 5 Page - Texas Instruments |
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TPS23754PWPR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 41 page ELECTRICAL CHARACTERISTICS – PoE AND CONTROL TPS23754 TPS23754-1 TPS23756 www.ti.com ....................................................................................................................................................... SLVS885B – OCTOBER 2008 – REVISED MAY 2009 [VDD=VDD1] or [VDD1=RTN], VC = RTN, COM=RTN=ARTN, all voltages referred to VSS unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX UNIT DETECTION (DEN) (VDD = VDD1 = RTN = VSUPPLY positive) Measure ISUPPLY Detection current VDD = 1.6 V 62 64.3 66.5 µA VDD = 10 V 399 406 414 VDD = 10 V, float DEN, measure ISUPPLY, Detection bias current 5.6 10 µA Note: Not during Mark state VPD_DIS Hotswap disable threshold 3 4 5 V DEN leakage current VDEN = VDD = 57 V, float VDD1 and RTN, measure IDEN 0.1 5 µA CLASSIFICATION (CLS) (VDD = VDD1 = RTN = VSUPPLY positive) 13 V ≤ VDD ≤ 21 V, Measure ISUPPLY RCLS = 1270 Ω 1.8 2.1 2.4 RCLS = 243 Ω 9.9 10.4 10.9 Classification current, ICLS mA applies to both cycles RCLS = 137 Ω 17.6 18.5 19.4 RCLS = 90.9 Ω 26.5 27.7 29.3 RCLS = 63.4 Ω 38.0 39.7 42 Classification mark resistance 5.6 V ≤ VDD ≤ 9.4 V 7.5 9.7 12 k Ω VCL_ON Regulator turns on, VDD rising 11.2 11.9 12.6 Classification regulator lower V threshold VCL_H Hysteresis(1) 1.55 1.65 1.75 VCU_OFF Regulator turns off, VDD rising 21 22 23 Classification regulator upper V threshold VCU_H Hysteresis(1) 0.5 0.75 1.0 VMSR Mark state reset VDD falling 3 4 5 V Leakage current VDD = 57 V, VCLS = 0 V, DEN = VSS, measure ICLS 1 µA PASS DEVICE (RTN) (VDD1 = RTN) On resistance 0.25 0.43 0.75 Ω Current limit VRTN = 1.5 V, VDD = 48 V, pulsed measurement 850 970 1100 mA Inrush limit VRTN = 2 V, VDD: 0 V → 48 V, pulsed measurement 100 140 180 mA Foldback voltage threshold VDD rising 11 12.3 13.6 V UVLO VUVLO_R VDD rising 33.9 35 36.1 UVLO threshold V VUVLO_H Hysteresis(1) 4.4 4.55 4.76 T2P Perform classification algorithm, VT2P-RTN = 1 V, ON characteristic 2 mA CTL = ARTN Leakage current VT2P = 18 V, CTL = VB 10 µA tT2P Delay From start of switching to T2P active 5 9 15 ms THERMAL SHUTDOWN Turnoff temperature TJ rising 135 145 155 °C Hysteresis(2) 20 °C (1) The hysteresis tolerance tracks the rising threshold for a given device. (2) These parameters are provided for reference only, and do not constitute part of TI's published specifications for purposes of TI's product warranty. Copyright © 2008–2009, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): TPS23754 TPS23754-1 TPS23756 |
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