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TPS54620RGYR Datasheet(PDF) 3 Page - Texas Instruments |
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TPS54620RGYR Datasheet(HTML) 3 Page - Texas Instruments |
3 / 39 page PACKAGE DISSIPATION RATINGS (1) (2) (3) ELECTRICAL CHARACTERISTICS TPS54620 www.ti.com ........................................................................................................................................................................................................ SLVS949 – MAY 2009 THERMAL IMPEDANCE ψ JT THERMAL CHARACTERISTIC PACKAGE JUNCTION TO AMBIENT JUNCTION TO TOP RGY 32°C/W 5°C/W (1) Maximum power dissipation may be limited by overcurrent protection (2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where distortion starts to substantially increase. Thermal management of the PCB should strive to keep the junction temperature at or below 150°C for best performance and long-term reliability. See power dissipation estimate in application section of this data sheet for more information. (3) Test board conditions: a. 2.5 inches × 2.5 inches, 4 layers, thickness: 0.062 inch b. 2 oz. copper traces located on the top of the PCB c. 2 oz. copper ground planes on the 2 internal layers and bottom layer d. 4 thermal vias located under the device package TJ = –40°C to 150°C, VIN = 4.5V to 17V, PVIN = 1.6V to 17V (unless otherwise noted) DESCRIPTION CONDITIONS MIN TYP MAX UNIT SUPPLY VOLTAGE (VIN AND PVIN PINS) PVIN operating input voltage 1.6 17 V VIN operating input voltage 4.5 17 V VIN internal UVLO threshold VIN rising 4.0 4.5 V VIN internal UVLO hysterisis 150 mV VIN shutdown supply Current EN = 0 V 2 5 µA VIN operating – non switching supply current VSENSE = 810 mV 600 800 µA ENABLE AND UVLO (EN PIN) Enable threshold Rising 1.21 1.26 V Enable threshold Falling 1.10 1.17 Input current EN = 1.1 V 1.15 µA Hysteresis current EN = 1.3 V 3.4 µA VOLTAGE REFERENCE Voltage reference 0 A ≤ Iout ≤ 6 A 0.792 0.800 0.808 V MOSFET High-side switch resistance BOOT-PH = 3 V 32 60 m Ω High-side switch resistance(1) BOOT-PH = 6 V 26 40 m Ω Low-side Switch Resistance(1) VIN = 12 V 19 30 m Ω ERROR AMPLIFIER Error amplifier Transconductance (gm) –2 µA < ICOMP < 2 µA, V(COMP) = 1 V 1300 µMhos Error amplifier dc gain VSENSE = 0.8 V 1000 3100 V/V Error amplifier source/sink V(COMP) = 1 V, 100 mV input overdrive ±110 µA Start switching threshold 0.25 V COMP to Iswitch gm 16 A/V CURRENT LIMIT High-side switch current limit threshold 8 11 A Low-side switch sourcing current limit 7 10 A Low-side switch sinking current limit 2.3 A (1) Measured at pins Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s) :TPS54620 |
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