TPS650731RSL datasheet(5/89 Pages) TI

Part #	TPS650731RSL

Description	Single Chip Power Solution for Navigation Systems

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Manufacturer	TI [Texas Instruments]

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DCDC1 CONVERTER

DCDC2 CONVERTER

(1)

TPS65070, TPS65072, TPS65073

TPS650731, TPS650732

www.ti.com ....................................................................................................................................................................................................... SLVS950 – JULY 2009

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VVINDCDC1

Input voltage range

Connected to SYS pin

2.8

6.3

V

IO

Maximum output

600

mA

VINDCDC1 = 2.8 V

150

300

RDS(ON)

High side MOSFET on-resistance

m

Ω

VINDCDC1 = 3.5 V

120

200

ILH

High side MOSFET leakage current

VINDCDC1 = 6.3 V

2

µA

VINDCDC1 = 2.8 V

200

300

RDS(ON)

Low side MOSFET on-resistance

m

Ω

VINDCDC1 = 3.5 V

160

180

ILL

Low side MOSFET leakage current

VDS = 6.3 V

1

µA

for TPS65072, TPS65073, TPS650731,

ILIMF

Forward current limit (high and low side MOSFET)

0.8

1.1

1.5

A

TPS650732

ILIMF

Forward current limit (high and low side MOSFET)

for TPS65070

1.1

1.6

2.2

A

fS

Oscillator frequency

1.95

2.25

2.55

MHz

Fixed output voltage range

0.725

3.3

V

Internal resistor divider, I2C selectable

For TPS65070, TPS65072

3.3

Default output voltage

V

For TPS65073, TPS650731, TPS650732

1.8

Vout

VINDCDC1 = VDCDC1 +0.3 V to 6.3 V;

DC output voltage accuracy; PFM mode(1)

–2%

3%

0 mA

≤ IO ≤ 0.6 A

VINDCDC1 = VDCDC1 +0.3 V to 6.3 V;

DC output voltage accuracy; PWM mode(1)

–1.5%

1.5%

0 mA

≤ IO ≤ 0.6 A

ΔVOUT

Power save mode ripple voltage(2)

IOUT = 1 mA, PFM mode

40

mVpp

tStart

Start-up time

Ttime from active EN to Start switching

170

µs

tRamp

VOUT ramp up time

Time to ramp from 5% to 95% of VOUT

250

µs

Vo -

power good threshold

rising voltage

5%

Vo -

power good threshold

falling voltage

10%

RDIS

Internal discharge resistor at L1

–35%

250

35%

Ω

(1)

Output voltage specification does not include tolerance of external voltage programming resistors. Output voltage in PFM mode is

scaled to +1% of nominal value.

(2)

Configuration L= 2.2

µH, C

OUT = 10 µF

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VVINDCDC

Input voltage range

Connected to SYS pin

2.8

6.3

V

2

TPS65072/73/731/732

600

IO

Maximum output current

Vin > 2.8 V

mA

TPS65070

1500

VINDCDC2 = 2.8 V

150

300

RDS(ON)

High side MOSFET on-resistance

m

Ω

VINDCDC2 = 3.5 V

120

200

ILH

High side MOSFET leakage current

VINDCDC2 = 6.3 V

2

µA

VINDCDC2 = 2.8 V

200

300

RDS(ON)

Low side MOSFET on-resistance

m

Ω

VINDCDC2 = 3.5 V

160

180

ILL

Low side MOSFET leakage current

VDS = 6.3 V

1

µA

TPS65072/73/731/732

Forward current limit (high- and low-side

0.8

1.1

1.5

ILIMF

2.8 V < VINDCDC2 < 6.3 V

A

MOSFET)

TPS65070

2.1

2.4

3.5

fS

Oscillator frequency

1.95

2.25

2.55

MHz

Vout

Adjustable output voltage range

External resistor divider

0.6

Vin

V

Vref

Reference voltage

600

mV

Internal resistor divider, I2C

Vout

Fixed output voltage range

0.725

3.3

V

selectable (Default setting)

(1)

Output voltage specification does not include tolerance of external voltage programming resistors. Output voltage in PFM mode is

scaled to +1% of nominal value.

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5

Product Folder Link(s): TPS65070 TPS65073 TPS650731, TPS650732

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