1

Motorola Bipolar Power Transistor Device Data

Plastic Medium-Power

Silicon PNP Darlingtons

. . . for use as output devices in complementary general–purpose amplifier applica-

tions.

• High DC Current Gain —

hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc

• Monolithic Construction

• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,

677, 677A, 679, 679A, 681

• BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703

MAXIMUM RATING

Rating

Symbol

BD676

BD676A

BD678

BD678A

BD680

BD680A

BD682

Unit

Collector–Emitter Voltage

VCEO

45

60

80

100

Vdc

Collector–Base Voltage

VCB

45

60

80

100

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current

IC

4.0

Adc

Base Current

IB

0.1

Adc

Total Device Dissipation

@ TC = 25 _C

Derate above 25

_C

PD

40

0.32

Watts

W/

_C

Operating and Storage Junction

Temperating Range

TJ, Tstg

– 55 to + 150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

θJC

3.13

_C/W

50

40

10

5.0

0

15

30

45

60

75

105

135

150

165

Figure 1. Power Temperature Derating

TC, CASE TEMPERATURE (°C)

120

90

45

20

15

30

25

35

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by BD676/D

BD676

BD676A

BD678

BD678A

BD680

BD680A

BD682

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

PNP SILICON

45, 60, 80, 100 VOLTS

40 WATTS

CASE 77–08

TO–225AA TYPE

REV 7