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PESD36VS2UT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESD36VS2UT Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 12 page PESD36VS2UT_1 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 16 July 2009 3 of 12 NXP Semiconductors PESD36VS2UT Low capacitance unidirectional double ESD protection diode [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to pin 2. Table 6. ESD maximum ratings Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Max Unit Per diode VESD electrostatic discharge voltage IEC 61000-4-2 (contact discharge) [1][2] -30 kV machine model [2] - 400 V MIL-STD-883 (human body model) -8 kV Table 7. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV Fig 1. 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 t ( µs) 040 30 10 20 001aaa630 40 80 120 IPP (%) 0 e−t 100 % IPP; 8 µs 50 % IPP; 20 µs 001aaa631 IPP 100 % 90 % t 30 ns 60 ns 10 % tr = 0.7 ns to 1 ns |
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