PMBT3904M datasheet(4/11 Pages) NXP

Part #	PMBT3904M

Description	40 V, 200 mA NPN switching transistor

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Manufacturer	NXP [NXP Semiconductors]

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PMBT3904M_1

Product data sheet

Rev. 01 — 21 July 2009

4 of 11

NXP Semiconductors

PMBT3904M

40 V, 200 mA NPN switching transistor

7.

Characteristics

FR4 PCB, standard footprint

Fig 2.

Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

006aab603

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

102

10

103

Zth(j-a)

(K/W)

1

duty cycle =

1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB =30V; IE = 0 A

--50

nA

IEBO

emitter-base cut-off

current

VEB =6V; IC = 0 A

--50

nA

hFE

DC current gain

VCE =1V

IC = 0.1 mA

60

180

-

IC = 1 mA

80

180

-

IC = 10 mA

100

180

300

IC = 50 mA

60

105

-

IC = 100 mA

30

50

-

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 1 mA

-

75

200

mV

IC = 50 mA; IB = 5 mA

-

120

300

mV

VBEsat

base-emitter

saturation voltage

IC = 10 mA; IB = 1 mA

650

750

850

mV

IC = 50 mA; IB = 5 mA

-

850

950

mV

td

delay time

VCC =3V; IC =10mA;

IBon = 1 mA;

IBoff = −1mA

--35

ns

tr

rise time

-

35

ns

ton

turn-on time

-

70

ns

ts

storage time

-

200

ns

tf

fall time

-

50

ns

toff

turn-off time

-

250

ns

Cc

collector capacitance VCB =5V; IE =ie =0A;

f=1MHz

--4

pF

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