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XC61HN2552MR-G Datasheet(PDF) 4 Page - Torex Semiconductor |
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XC61HN2552MR-G Datasheet(HTML) 4 Page - Torex Semiconductor |
4 / 13 page 4/13 XC61H Series PARAMETER SYMBOL RATINGS UNITS Input Voltage VIN 12.0 V Output Current IOUT 50 mA CMOS VSS-0.3 ~VIN+0.3 Output Voltage N-ch open drain RESTB VSS -0.3 ~ 12 V Power Dissipation SOT-23 Pd 250 mW Operating Temperature Range Topr -30∼+80 ℃ Storage Temperature Range Tstg -40∼+125 ℃ PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS CIRCUIT Detect Voltage VDF VDF(T) x 0.98 VDF(T) VDF(T) x 1.02 V ① Hysteresis Width VHYS VDF x 0.02 VDF x 0.05 VDF x 0.08 V ① VIN = 1.5V - 0.9 2.6 VIN = 2.0V - 1.0 3.0 VIN = 3.0V - 1.3 3.4 VIN = 4.0V - 1.6 3.8 Supply Current (*1) ISS VIN = 5.0V - 2.0 4.2 μA ② Operating Voltage VIN VDF=1.6V∼6.0V 0.7 - 10.0 V ① VIN = 1.0V 1.0 2.2 - VIN = 2.0V 3.0 7.7 - N-ch, VDS = 0.5V VIN = 3.0V 5.0 10.1 - VIN = 4.0V 6.0 11.5 - VIN = 5.0V 7.0 13.0 - ③ Output Current IOUT P-ch, VDS=2.1V (CMOS Output) VIN = 8.0V -10.0 -2.0 mA ④ CMOS Output - 0.01 - Leakage Current Nch Open Drain ILEAK VIN=10.0V, VOUT=10.0V - 0.01 0.1 μA ③ Detect Voltage Temperature Characteristics ΔVDF ΔTopr・VDF - ±100 - ppm/℃ - 50 - 200 80 - 400 Release Delay Time (VDR → RESEB inversion) tDR VIN changes from 0.6V to 10V 1 - 50 ms ⑤ Ta=25℃ VDF (T) is nominal detect voltage value Release Voltage: VDR = VDF + VHYS (*1) The supply current during power-start until output being stable (during release operation) is 2μA greater with comparison to the period after the completion of release operation because of the shoot-through current in delay current. ■ABSOLUTE MAXIMUM RATINGS Ta = 25℃ ■ELECTRICAL CHARACTERISTICS |
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Similar Description - XC61HN2552MR-G |
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