1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

One Watt Amplifier Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

BDB02C

BDB02D

Unit

Collector – Emitter Voltage

VCEO

–80

–100

Vdc

Collector – Base Voltage

VCES

–80

–100

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–0.5

Adc

Total Device Dissipation

@ TA = 25°C

Derate above 25

°C

PD

1.0

8.0

Watt

mW/

°C

Total Device Dissipation

@ TC = 25°C

Derate above 25

°C

PD

2.5

20

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

125

°C/W

Thermal Resistance, Junction to Case

RqJC

50

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Voltage

BDB02C

(IC = –10 mA, IB = 0)

BDB02D

V(BR)CEO

–80

–100

—

—

Vdc

Collector Cutoff Current

(VCB = –80 V, IE = 0)

BDB02C

(VCB = –100 V, IE = 0)

BDB02D

ICBO

—

—

–0.1

–0.1

mAdc

Emitter Cutoff Current (IC = 0, VEB = –5.0 V)

IEBO

—

–100

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = –100 mA, VCE = –1.0 V)

(IC = –500 mA, VCE = –2.0 V)

hFE

40

25

400

—

—

Collector – Emitter Saturation Voltage(1) (IC = –1000 mA, IB = –100 mA)

VCE(sat)

—

–0.7

Vdc

Collector – Emitter On Voltage(1) (IC = –1000 mA, VCE = –1.0 V)

VBE(on)

—

–1.2

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (IC = –200 mA, VCE = –5.0 V, f = 20 MHz)

fT

50

—

MHz

Output Capacitance (VCB = –10 V, IE = 0, f = 1.0 MHz)

Cob

—

30

pF

1. Pulse Test: Pulse Width

v 300 ms, Duty Cycle 2.0%.

Order this document

by BDB02C/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BDB02C,D

CASE 29–05, STYLE 1

TO–92 (TO–226AE)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER