CY22801
Document #: 001-15571 Rev. *B
Page 4 of 7
Absolute Maximum Conditions
Parameter
Description
Min
Max
Unit
VDD
Supply Voltage
–0.5
4.6
V
TS
Storage Temperature
–65
150
°C
TJ
Junction Temperature
–
125
°C
VIO
Input and Output Voltage
VSS – 0.5
VDD + 0.5
V
ESD
Electro-Static Discharge Voltage per MIL-STD-833, Method 3015
2000
–
V
Recommended Operating Conditions
Parameter
Description
Min
Typ
Max
Unit
VDD
Operating Voltage
3.14
3.3
3.47
V
TA
Ambient Temperature, Commercial Grade
0
–
70
°C
Ambient Temperature, Industrial Grade
–40
--
85
°C
CLOAD
Max. Load Capacitance on the CLK output
–
–
15
pF
tPU
Power up time for VDD to reach minimum specified voltage
(power ramps must be monotonic)
0.05
–
500
ms
Recommended Crystal Specifications
Parameter
Name
Description
Min
Typ
Max
Unit
FNOM
Nominal Crystal Frequency
Parallel resonance, fundamental mode,
and AT cut
8–
30
MHz
CLNOM
Nominal Load Capacitance
6
–
30
pF
R1
Equivalent Series Resistance
(ESR)
Fundamental mode
–
35
50
Ω
DL
Crystal Drive Level
No external series resistor assumed
–
0.5
2
mW
Notes
2. Not 100% tested, guaranteed by design.
3. IDD current specified for three CLK outputs running at 100 MHz.
4. Use CyClocksRT to calculate actual IDD for specific output frequency configurations.
DC Electrical Specifications[2]
Parameter
Name
Description
Min
Typ
Max
Unit
IOH
Output High Current
VOH = VDD – 0.5, VDD = 3.3V (source)
12
24
–
mA
IOL
Output Low Current
VOL = 0.5, VDD = 3.3V (sink)
12
24
–
mA
VIH
Input High Voltage
0.7*VDD
–VDD + 0.3
V
VIL
Input Low Voltage
VSS – 0.3
–
0.3*VDD
V
CIN1
Input Capacitance
All input pins except XIN and XOUT
–
–
7
pF
CIN2
Input Capacitance
XIN and XOUT pins
–
24
–
pF
IDD
[3, 4]
VDD Supply Current
–
70
–
mA
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