CY62148E MoBL®
Document #: 38-05442 Rev. *F
Page 3 of 10
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage to Ground
Potential.................................–0.5V to 6.0V (VCCmax + 0.5V)
DC Voltage Applied to Outputs
in High-Z State [5, 6]................–0.5V to 6.0V (VCCmax + 0.5V)
DC Input Voltage [5, 6]............ –0.5V to 6.0V (VCCmax + 0.5V)
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ......................................................>200mA
Operating Range
Device
Range
Ambient
Temperature
VCC [7]
CY62148E
Ind’l/Auto-A
–40°C to +85°C
4.5V to 5.5V
Electrical Characteristics (Over the Operating Range)
Parameter
Description
Test Conditions
45 ns
55 ns [2]
Unit
Min Typ [3]
Max
Min Typ [3]
Max
VOH
Output HIGH
Voltage
IOH = –1 mA
2.4
2.4
V
VOL
Output LOW Voltage IOL = 2.1 mA
0.4
0.4
V
VIH
Input HIGH Voltage VCC = 4.5V to 5.5V
2.2
VCC+ 0.5 2.2
VCC+ 0.5
V
VIL
Input LOW voltage
VCC = 4.5V to 5.5V For TSOPII
package
–0.5
0.8
V
For SOIC
package
–0.5
0.6 [8]
IIX
Input Leakage
Current
GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage
Current
GND < VO < VCC, Output Disabled
–1
+1
–1
+1
µA
ICC
VCC Operating
Supply Current
f = fmax = 1/tRC
VCC = VCC(max)
IOUT = 0 mA
CMOS levels
15
20
15
20
mA
f = 1 MHz
2
2.5
2
2.5
ISB2 [9]
Automatic CE Power
down Current —
CMOS Inputs
CE > VCC – 0.2V
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = VCC(max)
17
1
7
µA
Capacitance (For All Packages) [10]
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10
pF
COUT
Output Capacitance
10
pF
Notes
5. VIL(min) = –2.0V for pulse durations less than 20 ns for I < 30 mA.
6. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.
7. Full device AC operation assumes a minimum of 100 µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
8. Under DC conditions the device meets a VIL of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.6V. This
is applicable to SOIC package only. Refer to AN13470 for details.
9. Only chip enable (CE) must be HIGH at CMOS level to meet the ISB2 spec. Other inputs can be left floating.
10. Tested initially and after any design or process changes that may affect these parameters.
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