CY62167EV18 MoBL®
Document #: 38-05447 Rev. *G
Page 3 of 13
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55°C to + 125°C
Supply Voltage to Ground
Potential .......................... –0.2V to 2.45V (VCC(max) + 0.2V)
DC Voltage Applied to Outputs
in High Z State[6, 7]........... –0.2V to 2.45V (VCC(max) + 0.2V)
DC Input Voltage[6, 7]....... –0.2V to 2.45V (VCC(max) + 0.2V)
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage........................................... >2001V
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC[8]
CY62167EV18LL Industrial –40°C to +85°C 1.65V to 2.25V
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
55 ns
Unit
Min
Typ[4]
Max
VOH
Output HIGH Voltage
IOH = –0.1 mA
1.4
V
VOL
Output LOW Voltage
IOL = 0.1 mA
0.2
V
VIH
Input HIGH Voltage
VCC = 1.65V to 2.25V
1.4
VCC + 0.2V
V
VIL
Input LOW Voltage
VCC = 1.65V to 2.25V
–0.2
0.4
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
μA
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
–1
+1
μA
ICC
VCC Operating Supply
Current
f = fmax = 1/tRC
VCC = VCC(max)
IOUT = 0 mA
CMOS levels
25
30
mA
f = 1 MHz
2.2
4.0
mA
ISB1
Automatic CE Power Down
Current – CMOS Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V
VIN > VCC – 0.2V, VIN < 0.2V)
f = fmax(Address and Data Only),
f = 0 (OE, WE, BHE and BLE),
VCC = VCC(max)
1.5
12
μA
ISB2[9]
Automatic CE Power Down
Current – CMOS Inputs
CE1 > VCC – 0.2V or CE2 < 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = VCC(max)
1.5
12
μA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10
pF
COUT
Output Capacitance
10
pF
Notes
6. VIL(min) = –2.0V for pulse durations less than 20 ns.
7. VIH(max) = VCC + 0.75V for pulse durations less than 20 ns.
8. Full Device AC operation is based on a 100
μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.
9. Only chip enables (CE1 and CE2), and byte enables (BHE and BLE) must be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
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