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CY62256N
Document #: 001-06511 Rev. *B
Page 4 of 14
Thermal Resistance
Parameter
Description[5]
Test Conditions
DIP
SOIC
TSOP
RTSOP
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 4.25 x 1.125
inch, 4-layer printed circuit board
75.61
76.56
93.89
93.89
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
43.12
36.07
24.64
24.64
°C/W
Figure 3. AC Test Loads and Waveforms
Data Retention Characteristics
Parameter
Description
Conditions[6]
Min
Typ[2]
Max
Unit
VDR
VCC for Data Retention
2.0
V
ICCDR
Data Retention Current L
VCC = 2.0V, CE > VCC − 0.3V,
VIN > VCC − 0.3V, or VIN < 0.3V
250
μA
LL-Commercial
0.1
5
μA
LL - Industrial/Auto-A
0.1
10
μA
LL - Auto-E
0.1
10
μA
tCDR[8]
Chip Deselect to Data Retention Time
0
ns
tR[8]
Operation Recovery Time
tRC
ns
3.0V
5V
OUTPUT
R1 1800
Ω
R2
990
Ω
100 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
<5 ns
<5 ns
5V
OUTPUT
R1 1800
Ω
R2
990
Ω
5pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
1.77V
Equivalent to:
THÉVENIN EQUIVALENT
ALL INPUT PULSES
639
Ω
Note
6. No input may exceed VCC + 0.5V.
Figure 4. Data Retention Waveform
3.0V
3.0V
tCDR
VDR > 2V
DATA RETENTION MODE
tR
CE
VCC
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