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STK12C68-5K55M Datasheet(PDF) 3 Page - Cypress Semiconductor

Part No. STK12C68-5K55M
Description  64 Kbit (8K x 8) AutoStore nvSRAM
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Maker  CYPRESS [Cypress Semiconductor]
Homepage  http://www.cypress.com
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 3 page
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STK12C68-5 (SMD5962-94599)
Document Number: 001-51026 Rev. **
Page 3 of 18
Device Operation
The STK12C68-5 nvSRAM is made up of two functional compo-
nents paired in the same physical cell. These are an SRAM
memory cell and a nonvolatile QuantumTrap cell. The SRAM
memory cell operates as a standard fast static RAM. Data in the
SRAM is transferred to the nonvolatile cell (the STORE
operation) or from the nonvolatile cell to SRAM (the RECALL
operation). This unique architecture enables the storage and
recall of all cells in parallel. During the STORE and RECALL
operations, SRAM Read and Write operations are inhibited. The
STK12C68-5 supports unlimited reads and writes similar to a
typical SRAM. In addition, it provides unlimited RECALL opera-
tions from the nonvolatile cells and up to one million STORE
operations.
SRAM Read
The STK12C68-5 performs a Read cycle whenever CE and OE
are LOW while WE and HSB are HIGH. The address specified
on pins A0–12 determines the 8,192 data bytes accessed. When
the Read is initiated by an address transition, the outputs are
valid after a delay of tAA (Read cycle 1). If the Read is initiated
by CE or OE, the outputs are valid at tACE or at tDOE, whichever
is later (Read cycle 2). The data outputs repeatedly respond to
address changes within the tAA access time without the need for
transitions on any control input pins, and remains valid until
another address change or until CE or OE is brought HIGH, or
WE or HSB is brought LOW.
SRAM Write
A Write cycle is performed whenever CE and WE are LOW and
HSB is HIGH. The address inputs must be stable prior to entering
the Write cycle and must remain stable until either CE or WE
goes HIGH at the end of the cycle. The data on the common IO
pins DQ0–7 are written into the memory if it has valid tSD, before
the end of a WE controlled Write or before the end of an CE
controlled Write. Keep OE HIGH during the entire Write cycle to
avoid data bus contention on common IO lines. If OE is left LOW,
internal circuitry turns off the output buffers tHZWE after WE goes
LOW.
AutoStore Operation
The STK12C68-5 stores data to nvSRAM using one of three
storage operations:
1. Hardware store activated by HSB
2. Software store activated by an address sequence
3. AutoStore on device power down
AutoStore operation is a unique feature of QuantumTrap
technology and is enabled by default on the STK12C68-5.
During normal operation, the device draws current from VCC to
charge a capacitor connected to the VCAP pin. This stored
charge is used by the chip to perform a single STORE operation.
If the voltage on the VCC pin drops below VSWITCH, the part
automatically disconnects the VCAP pin from VCC. A STORE
operation is initiated with power provided by the VCAP capacitor.
Figure 3 shows the proper connection of the storage capacitor
(VCAP) for automatic store operation. A charge storage capacitor
between 68 µF and 220 µF (+20%) rated at 6V must be provided.
The voltage on the VCAP pin is driven to 5V by a charge pump
internal to the chip. A pull up is placed on WE to hold it inactive
during power up.
In system power mode, both VCC and VCAP are connected to the
+5V power supply without the 68
μF capacitor. In this mode, the
AutoStore function of the STK12C68-5 operates on the stored
system charge as power goes down. The user must, however,
guarantee that VCC does not drop below 3.6V during the 10 ms
STORE cycle.
To reduce unnecessary nonvolatile stores, AutoStore, and
Hardware Store operations are ignored, unless at least one Write
operation has taken place since the most recent STORE or
RECALL cycle. Software initiated STORE cycles are performed
regardless of whether a Write operation has taken place. An
optional pull up resistor is shown connected to HSB. The HSB
signal is monitored by the system to detect if an AutoStore cycle
is in progress.
Figure 3. AutoStore Mode
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