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2SD1789 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1789 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SD1789 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=1A; IB=2mA 1.5 V VBEsat Emitter-base saturation voltage IC=1A; IB=2mA 2.0 V ICBO Collector cut-off current VCB=200V 0.1 mA ICEO Collector cut-off current VCE=200V 0.1 mA IEBO Emitter cut-off current VEB=7V 5 mA hFE DC current gain IC=1A ; VCE=3V 1500 30000 fT Transition frequency IC=0.4A ; VCE=10V 20 MHz ton Turn-on time 2.0 μs ts Storage time 12 μs tf Fall time IC=1A;IB1=IB2=2mA, RL=25Ω VBB2=4V 5.0 μs |
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