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BU2527DF Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BU2527DF Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DF DESCRIPTION ・ ・With TO-3PFa package ・High voltage ・High speed switching ・Built-in damper diode APPLICATIONS ・For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 12 A ICP Collector current (Pulse) 30 A IB Base current (DC) 8 A IBM Base current (Pulse) 12 A Ptot Total power dissipation TC=25℃ 45 W Tj Max.operating junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ JMnic |
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