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BUL510 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part # BUL510
Description  Silicon Power Transistors
Download  3 Pages
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Manufacturer  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Direct Link  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BUL510 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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Product Specification
www.jmnic.com
JMnic
Silicon Power Transistors
BUL510
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;L=25mH
450
V
V(BR)EBO
Emitter-base breakdwon voltage
IE=10mA ;IC=0
9
V
VCEsat-1
Collector-emitter saturation voltage
IC=3A IB=0.6A
0.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=4A IB=0.8A
1.0
V
VCEsat-3
Collector-emitter saturation voltage
IC=5A IB=1.25A
1.5
V
VBEsat-1
Emitter-base saturation voltage
IC=3A IB=0.6A
1.2
V
VBEsat-2
Emitter-base saturation voltage
IC=5A IB=1.25A
1.5
V
ICBO
Collector cut-off current
VCB=1000V IE=0
TC=125℃
100
500
μA
ICEO
Collector cut-off current
VCE=450V IB=0
250
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
45
hFE-2
DC current gain
IC=10mA ; VCE=5V
10
Switching times inductive load
ts
Storage time
3.4
μs
tf
Fall time
IC=2.5A VCL=300V
IB1 =0.8A;IB2=-1.6A
L=200μH
0.15
μs


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