N-Channel MOSFET

Absolute Maximum Ratings

Thermal and Mechanical Characteristics

G

D

S

Single die MOSFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

oz

g

in·lbf

N·m

Ratings

8

5

25

±30

285

4

Min

Typ

Max

225

0.56

0.11

-55

150

300

0.07

1.2

10

1.1

Parameter

Continuous Drain Current @ T

C

= 25°C

Continuous Drain Current @ T

C

= 100°C

Gate-Source Voltage

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

C

= 25°C

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-220 Package), 4-40 or M3 screw

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

T

J

,T

STG

T

L

W

T

Torque

TYPICAL APPLICATIONS

• PFC and other boost converter

• Buck converter

• Two switch forward (asymmetrical bridge)

• Single switch forward

• Flyback

• Inverters

FEATURES

• Fast switching with low EMI/RFI

• Low gate charge

• Avalanche energy rated

• RoHS compliant

APT8M80K

800V,

8A, 1.35

Ω MAX,

APT8M80K

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in flyback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

MicrosemiWebsite-http://www.microsemi.com