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APT9F100S Datasheet(PDF) 4 Page - Microsemi Corporation |
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APT9F100S Datasheet(HTML) 4 Page - Microsemi Corporation |
4 / 4 page D3PAK Package Outline TO-247 (B) Package Outline e1 100% Sn Plated 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) BSC 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 3.50 (.138) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Source Gate 5.45 (.215) BSC Dimensions in Millimeters and (Inches) 2-Plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) BSC {2 Plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 Plcs} 0.56 (.022) Dimensions in Millimeters (Inches) Heat Sink (Drain) and Leads are Plated 3.81 (.150) 4.06 (.160) (Base of Lead) 1.98 (.078) 2.08 (.082) Gate Drain Source 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) Revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) Revised 4/18/95 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. 1ms 100ms Rds(on) 0.5 SINGLE PULSE 0.1 0.3 0.7 0.05 D = 0.9 Scaling for Different Case & Junction Temperatures: I D = ID(T C = 25 °C)*(TJ - TC)/125 Peak TJ = PDM x ZθJC + TC Duty Factor D = t1/t 2 t2 t1 Note: t1 = Pulse Duration DC line 100μs I DM 10ms 13μs 100μs I DM 100ms 10ms 13μs Rds(on) DC line T J = 150°C T C = 25°C 1ms T J = 125°C T C = 75°C V DS, DRAIN-TO-SOURCE VOLTAGE (V) V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1 10 100 1000 1 10 100 1000 60 10 1 0.1 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 60 10 1 0.1 APT9F100B_S |
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