SSO-AD-500NIR-TO52 datasheet(1/2 Pages) ROITHNER

Part #	SSO-AD-500NIR-TO52

Description	Avalanche Photodiode NIR

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Manufacturer	ROITHNER [Roithner LaserTechnik GmbH]

Direct Link	http://www.roithner-laser.com

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Special characteristics:

quantum efficiency >80% at

!!!! 760-910 nm

high speed, low noise

500 µm diameter active area

low slope multiplication curve

Package 2 (TO52) :

SSO-AD-500 NIR-TO52

Avalanche Photodiode NIR

Parameters:

Active area

0,196 mm

2

∅ 500 µm

dark current

1)

(M=100)

max. 5 nA

typ. 0,5 - 1 nA

Total capacitance

1)

(M=100)

typ. 1,2 pF

Break-down voltage UBR

(at ID=2µA)

120 - 300 V

Temperature coefficient of UBR

typ. 0,55 %/°C

Spectral responsivity

(at 905 nm)

min. 0,55 A/W

typ. 0,60 A/W

Cut-off frequency

905 nm

(-3dB)

655 nm

400 MHz

550 MHz

Rise time

905 nm

655 nm

550 ps

300 ps

Optimum gain

50 - 60

Gain M

min 200

"Excess Noise" factor

(M=100)

typ. 2,5

"Excess Noise" index

(M=100)

typ. 0,2

Noise current

(M=100)

typ. 1 pA/Hz

½

N.E.P.

(M=100, 880 nm)

typ. 2 * 10

-14 W/Hz½

Operating temperature

Storage temperature

-20 ... +70°C

-60 ... +100°C

1) measurement conditions:

Setup of photo current 10nA at M=1 and irradiation by a

NIR-LED (880 nm, 80 nm bandwith).

Rise of the photo current up to 1 µA, (M=100) by internal

multiplication due to an increasing bias voltage

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