Absolute Maximum Ratings

Thermal and Mechanical Characteristics

A proprietary planar strip design yields excellent reliability and manufacturability. Low

switching loss is achieved with low input capacitance and ultra low C

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in flyback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

N-Channel MOSFET

G

D

S

Single die MOSFET

Unit

A

V

mJ

A

Unit

W

°C/W

°C

V

oz

g

in·lbf

N·m

Ratings

33

20

173

±30

1979

24

Min

Typ

Max

543

0.23

0.15

-55

150

2500

1.03

29.2

10

1.1

Parameter

Continuous Drain Current @ T

Continuous Drain Current @ T

Gate-Source Voltage

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Package Weight

Terminals and Mounting Screws.

Symbol

I

D

I

DM

V

GS

E

AS

I

AR

Symbol

P

D

R

θJC

R

θCS

T

V

Isolation

W

T

Torque

TYPICAL APPLICATIONS

• PFC and other boost converter

• Buck converter

• Two switch forward (asymmetrical bridge)

• Single switch forward

• Flyback

• Inverters

FEATURES

• Fast switching with low EMI/RFI

• Low gate charge

• Avalanche energy rated

• RoHS compliant

SO

T-2

27

file # E145592

"UL Recognized"

G

S

S

D

APT32M80J

800V, 33A, 0.19Ω Max

APT32M80J

Microsemi Website - http://www.microsemi.com