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APT84F50B2 Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT84F50B2 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page T-MaxTM TO-264 N-Channel FREDFET Absolute Maximum Ratings Thermal and Mechanical Characteristics G D S Single die FREDFET Unit A V mJ A Unit W °C/W °C oz g in·lbf N·m Ratings 84 53 270 ±30 1845 42 Min Typ Max 1135 0.11 0.11 -55 150 300 0.22 6.2 10 1.1 Parameter Continuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ T C = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque ( TO-264 Package), 4-40 or M3 screw Symbol I D I DM V GS E AS I AR Symbol P D R θJC R θCS T J,TSTG T L W T Torque TYPICAL APPLICATIONS • ZVSphaseshiftedandotherfullbridge •Halfbridge •PFCandotherboostconverter • Buckconverter •Singleandtwoswitchforward •Flyback FEATURES •FastswitchingwithlowEMI •Lowtrrforhighreliability •UltralowCrssforimprovednoiseimmunity •Lowgatecharge •Avalancheenergyrated •RoHScompliant APT84F50B2 APT84F50L 500V,84A,0.065 ΩMax,trr ≤320ns APT84F50B2 APT84F50L Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. MicrosemiWebsite-http://www.microsemi.com |
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