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APTCV60TLM70T3G Datasheet(PDF) 11 Page - Microsemi Corporation

Part # APTCV60TLM70T3G
Description  Three level inverter CoolMOS & Trench Field Stop IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTCV60TLM70T3G Datasheet(HTML) 11 Page - Microsemi Corporation

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APTCV60TLM70T3G
www.microsemi.com
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CR2, CR3, CR7 & CR8 Typical performance curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
20
40
60
80
0.0
1.0
2.0
3.0
4.0
VF, Anode to Cathode Voltage (V)
Forward Current vs Forward Voltage
Energy losses vs Collector Current
0
0.5
1
1.5
2
2.5
0
20
406080
IC (A)
VCE = 800V
VGE = 15V
RG = 5Ω
TJ = 125°C
0.6
0.8
1
1.2
1.4
1.6
1.8
010
20
30
Gate resistance (ohms)
Switching Energy Losses vs Gate Resistance
VCE = 800V
VGE =15V
IC = 30A
TJ = 125°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.


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