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T35L3232B-3.8Q Datasheet(PDF) 7 Page - Taiwan Memory Technology |
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T35L3232B-3.8Q Datasheet(HTML) 7 Page - Taiwan Memory Technology |
7 / 19 page TE CH tm Preliminary T35L3232B Taiwan Memory Technology, Inc. reserves the right P. 15 Publication Date: FEB. 2000 to change products or specifications without notice. Revision:0.A PIPELINE READ/WRITE TIMING A4 High-Z BURST READ C LK ADS C AD S P A D D RE S S B W E B W 1 - B W 4 t KC t KH t KL t ADSS t ADSH DO N' T CARE UNDEFINED t AS t AH t WS t WH t CES t CEH t DH t KQ tOELZ tOEHZ t DS t KQ t KQLZ Single WRITE Q(A1) Q(A2) Q(A3) Q(A4) Q(A4+1) Q(A4+3) Q(A4+2) A5 A3 A1 (NOTE1) CE ( N O T E 2 ) ADV O E D A2 A6 Q High-Z D(A3) D(A5) D(A6) Back-to-Back READs Pass-through READ Back-to-Back WRITEs Note: 1. Q(A4) refers to output from address A4. Q (A4 + 1) refers to output from the next internal burst address following A4. 2. CE2 and CE2 have timing identical to CE . On this diagram, when CE is LOW, CE2 is LOW and CE2 is HIGH. When CE is HIGH, CE2 is HIGH and CE2 is LOW. 3. The data bus (Q) remains in High-Z following a WRITE cycle unless an ADSP , ADSC or ADV cycle is performed. 4. GW is HIGH. 5. Back-to-back READs may be controlled by either ADSP or ADSC. |
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