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T35L6432A-5T Datasheet(PDF) 9 Page - Taiwan Memory Technology |
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T35L6432A-5T Datasheet(HTML) 9 Page - Taiwan Memory Technology |
9 / 15 page TE CH tm T35L6432A Taiwan Memory Technology, Inc. reserves the right P. 9 Publication Date: DEC. 1998 to change products or specifications without notice. Revision:A AC TEST CONDITIONS Input pulse levels 0V to 3.0V Input rise and fall times 1.5ns Input timing reference levels 1.5V Output reference levels 1.5V Output load See Figures 1 and 2 Notes: 1. All voltages referenced to VSS (GND). 2. Overshoot: VIH ≤ +3.6 V for t ≤ tKC/2. Undershoot: VIL ≤ -1.0 V for t ≤ tKC/2. 3. Icc is given with no output current. Icc increases with greater output loading and faster cycle times. 4. This parameter is sampled. 5. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. 6. Output loading is specified with CL = 5 pF as in Fig. 2. 7. At any given temperature and voltage condition, tKQHZ is less than tKQLZ and tOEHZ is less than tOELZ. 8. A READ cycle is defined by byte write enables all HIGH or ADSP LOW along with chip enables being active for the required setup and hold times. A WRITE cycle is defined by at one byte or all byte WRITE per READ/WRITE TRUTH TABLE. 9. OE is a "don't care" when a byte write enable is sampled LOW. 10.This is a synchronous device. All synchronous inputs must meet specified setup and hold time, except for "don't care" as defined in the truth table. 11.AC I/O curves are available upon request. 12."Device Deselected means the device is in POWER-DOWN mode as defined in the truth table. "Device Selected" means the device is active. 13.Typical values are measured at 3.3V, 25 °C and 20ns cycle time. 14.MODE pin has an internal pull-up and exhibits an input leakage current of ± 10µA. OUTPUT LOADS DQ DQ Fig.1 OUTPUT LOAD EQUIVALENT Fig.2 OUTPUT LOAD EQUIVALENT Z0 = 50 50 30 pF Vt = 1.5V 3.3V 317 351 5 pF |
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