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APTGF50DH120T3G Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTGF50DH120T3G Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 7 page APTGF50DH120T3G www.microsemi.com 1- 7 Application • AC and DC motor control • Switched Mode Power Supplies Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS compliant Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 23 R1 32 30 CR3 CR1 Q4 CR2 CR4 31 29 19 7 22 3 4 18 8 Q1 15 16 13 14 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V Tc = 25°C 70 IC Continuous Collector Current Tc = 80°C 50 ICM Pulsed Collector Current Tc = 25°C 150 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 312 W RBSOA Reverse Bias Safe Operating Area Tj = 150°C 100A @ 1200V VCES = 1200V IC = 50A @ Tc = 80°C Asymmetrical - Bridge NPT IGBT Power Module |
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