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T2316405A-50 Datasheet(PDF) 4 Page - Taiwan Memory Technology |
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T2316405A-50 Datasheet(HTML) 4 Page - Taiwan Memory Technology |
4 / 9 page TE CH tm Preliminary T2316407A Taiwan Memory Technology, Inc. reserves the right P. 4 Publication Date: APR. 2001 to change products or specifications without notice. Revision:0.B T2316405A DC CHARACTERISTICS (Ta = 0 to 70 °°C ) T2316405A-10 Vcc = 2.6V ± 0.2V, Vss = 0V T2316407A-50/60/70 Vcc = 3.3V ± 0.3V, Vss = 0V -50 -60 -70 -10 Parameter Symbol Min Ma x Min Ma x Min Ma x Min Ma x Unit Test Condition Input Leakage Current ILI -5 5 -5 5 -5 5 -5 5 uA 0V ≤ Vin ≤ Vcc+ 0.3V Other pins = 0V Output Leakage Current ILO -5 5 -5 5 -5 5 -5 5 uA 0V ≤ Vout ≤ Vcc Dout = disable Output High Voltage VOH 2.0 - 2.0 - 2.0 - 2.0 - V High Iout= -2.0mA Output Low Voltage VOL - 0.8 - 0.8 - 0.8 - 0.8 V Low Iout=2.0mA Operating Current Icc1 - 95 - 90 - 80 - 50 mA RAS , CAS cycling tRC=min Standby Current Icc2 - 2 - 2 - 2 - 2 mA TTL interface, RAS ,CAS =VIH, DOUT=High-Z Standby Current Icc3 - 0.5 - 0.5 - 0.5 - 0.5 mA CMOS interface, RAS , CAS > Vcc-0.2V EDO Page Mode Current Icc4 - 95 - 90 - 80 - 50 mA RAS =VIL,CAS cycling, tPC= min RAS -only refresh Current Icc5 - 95 - 90 - 80 - 50 mA CAS =VIH, RAS cycling, tRC = min CAS Before RAS Refresh Current Icc6 - 95 - 90 - 80 - 50 mA RAS ,CAS cycling, tRC= min Note: Icc depends on output load condition when the device is selected. Icc max is specified at the output open condition, Icc is specified as an average current. CAPACITANCE (Ta =25 °C, f = 1M HZ, T2316405A-10 Vcc = 2.6V, T2316407A-50/60/70 Vcc =3.3V) Parameter Symbol Typ Max Unit Input Capacitance (address) CI1 - 5 pF Input Capacitance ( RAS , CAS , WE , OE ) CI2 - 7 pF Output Capacitance (data-in/out) CI/O - 7 pF |
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