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T35L6432B-12T Datasheet(PDF) 7 Page - Taiwan Memory Technology |
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T35L6432B-12T Datasheet(HTML) 7 Page - Taiwan Memory Technology |
7 / 16 page TE CH tm T35L6432B Taiwan Memory Technology, Inc. reserves the right P.7 Publication Date: JUL. 2002 to change products or specifications without notice. Revision: A TRUTH TABLE OPERATION ADDRESS USED CE CE2 CE2 ZZ ADSP ADSC ADV WRITE OE CLK DQ Deselected Cycle, Power Down None H X X L X L X X X L-H High-Z Deselected Cycle, Power Down None L X L L L X X X X L-H High-Z Deselected Cycle, Power Down None L H X L L X X X X L-H High-Z Deselected Cycle, Power Down None L X L L H L X X X L-H High-Z Deselected Cycle, Power Down None L H X L H L X X X L-H High-Z Snooze Cycle, Power Down None X X X H X X X X X X High-Z READ Cycle, Begin Burst External L L H L L X X X L L-H Q READ Cycle, Begin Burst External L L H L L X X X H L-H High-Z WRITE Cycle, Begin Burst External L L H L H L X L X L-H D READ Cycle, Begin Burst External L L H L H L X H L L-H Q READ Cycle, Begin Burst External L L H L H L X H H L-H High-Z READ Cycle, Continue Burst Next X X X L H H L H L L-H Q READ Cycle, Continue Burst Next X X X L H H L H H L-H High-Z READ Cycle, Continue Burst Next H X X L X H L H L L-H Q READ Cycle, Continue Burst Next H X X L X H L H H L-H High-Z WRITE Cycle, Continue Burst Next X X X L H H L L X L-H D WRITE Cycle, Continue Burst Next H X X L X H L L X L-H D READ Cycle, Suspend Burst Current X X X L H H H H L L-H Q READ Cycle, Suspend Burst Current X X X L H H H H H L-H High-Z READ Cycle, Suspend Burst Current H X X L X H H H L L-H Q READ Cycle, Suspend Burst Current H X X L X H H H H L-H High-Z WRITE Cycle, Suspend Burst Current X X X L H H H L X L-H D WRITE Cycle, Suspend Burst Current H X X L X H H L X L-H D Note: 1. X means "don't care." H means logic HIGH. L means logic LOW. WRITE = L means any one or more byte write enable signals (BW1, BW2 , BW3 or BW4 ) and BWE are LOW, or GW equals LOW. WRITE = H means all byte write signal are HIGH. 2. BW1= enables write to DQ1-DQ8. BW2 = enables write to DQ9-DQ16. BW3 = enables write to DQ17-DQ24. BW4 =enables write to DQ25-DQ32. 3. All inputs except OE and ZZ must meet setup and hold times around the rising edge ( LOW to HIGH) of CLK. 4. Suspending burst generates wait cycle. 5. For a write operation following a read operation. OE must be HIGH before the input data required setup time plus High-Z time for OE and staying HIGH throughout the input data hold time. 6. This device contains circuitry that will ensure the outputs will be High-Z during power-up. 7. ADSP= LOW along with chip being selected always initiates an internal READ cycle at the L-H edge of CLK. A WRITE cycle can be performed by setting WRITE LOW for the CLK L-H edge of the subsequent wait cycle. Refer to WRITE timing diagram for clarification. |
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