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APTGT30TL60T3G Datasheet(PDF) 5 Page - Microsemi Corporation |
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APTGT30TL60T3G Datasheet(HTML) 5 Page - Microsemi Corporation |
5 / 7 page APTGT30TL60T3G www.microsemi.com 5- 7 Output Characteristics (VGE=15V) TJ=25°C TJ=25°C TJ=125°C TJ=150°C 0 10 20 30 40 50 60 00.511.5 2 2.5 3 VCE (V) Output Characteristics VGE=15V VGE=13V VGE=19V VGE=9V 0 10 20 30 40 50 60 00.5 11.522.5 3 3.5 VCE (V) TJ = 150°C Transfert Characteristics TJ=25°C TJ=25°C TJ=150°C 0 10 20 30 40 50 60 56 78 9 10 11 12 VGE (V) Energy losses vs Collector Current Eon Eoff 0 0.5 1 1.5 2 0 10 2030 4050 60 IC (A) VCE = 300V VGE = 15V RG = 10Ω TJ = 150°C Eon Eon Eoff 0 0.5 1 1.5 2 2.5 0 102030 40506070 Gate Resistance (ohms) VCE = 300V VGE =15V IC = 30A TJ = 150°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 700 VCE (V) VGE=15V TJ=150°C RG=10Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds |
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