APTGT30TL601G

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3- 7

CR1 to CR4 diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

600

V

150

Maximum Reverse Leakage Current

350

µA

DC Forward Current

Tc = 80°C

20

A

1.6

2

Diode Forward Voltage

1.5

V

100

Reverse Recovery Time

150

ns

1.1

Reverse Recovery Charge

2.3

µC

0.23

Reverse Recovery Energy

di/dt =1600A/µs

0.50

mJ

Junction to Case Thermal Resistance

3.25

°C/W

CR5 & CR6 diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

600

V

150

Maximum Reverse Leakage Current

350

µA

DC Forward Current

Tc = 80°C

30

A

1.6

2

Diode Forward Voltage

1.5

V

100

Reverse Recovery Time

150

ns

1.5

Reverse Recovery Charge

3.1

µC

0.34

Reverse Recovery Energy

di/dt =1800A/µs

0.75

mJ

Junction to Case Thermal Resistance

2.45

°C/W

Thermal and package characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

Operating junction temperature range

-40

175

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

Torque Mounting torque

To heatsink

M4

2.5

4.7

N.m

Wt

Package Weight

80

g