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APTGT50DH60T1G Datasheet(PDF) 4 Page - Microsemi Corporation

Part # APTGT50DH60T1G
Description  Asymmetrical - Bridge Trench Field Stop IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGT50DH60T1G Datasheet(HTML) 4 Page - Microsemi Corporation

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APTGT50DH60T1G
www.microsemi.com
4 – 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=25°C
TJ=125°C
TJ=150°C
0
20
40
60
80
100
0
0.5
1
1.5
2
2.5
3
VCE (V)
Output Characteristics
VGE=15V
VGE=13V
VGE=19V
VGE=9V
0
20
40
60
80
100
00.5
11.5
2
2.5
33.5
VCE (V)
TJ = 150°C
Transfert Characteristics
TJ=25°C
TJ=25°C
TJ=125°C
TJ=150°C
0
20
40
60
80
100
56
78
9
10
11
12
VGE (V)
Energy losses vs Collector Current
Eon
Eoff
Er
0
0.5
1
1.5
2
2.5
3
3.5
0
2040
6080
100
IC (A)
VCE = 300V
VGE = 15V
RG = 8.2Ω
TJ = 150°C
Eon
Eon
Eoff
Er
0
0.5
1
1.5
2
2.5
3
5
1525
35
4555
65
Gate Resistance (ohms)
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
0
25
50
75
100
125
0
100 200 300 400 500 600 700
VCE (V)
VGE=15V
TJ=150°C
RG=8.2Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
IGBT


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