APTGT50TL60T3G

www.microsemi.com

5- 7

0

20

40

60

80

100

00.5

11.5

22.5

3

Output Characteristics

0

20

40

60

80

100

0

0.5

1

1.5

2

2.5

3

3.5

Transfert Characteristics

0

20

40

60

80

100

5

6

7

8

9

101112

Energy losses vs Collector Current

Eon

Eoff

0

0.5

1

1.5

2

2.5

3

3.5

0

20

40

60

80

100

Eon

Eoff

0

0.5

1

1.5

2

2.5

3

5

15

253545

5565

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

Reverse Bias Safe Operating Area

0

25

50

75

100

125

0

100 200 300 400 500 600 700

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration in Seconds