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APTGT75DH60T1G Datasheet(PDF) 1 Page - Microsemi Corporation |
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APTGT75DH60T1G Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 6 page  APTGT75DH60T1G www.microsemi.com 1 – 6 Pins 3/4 must be shorted together Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC = 25°C 100* IC Continuous Collector Current TC = 80°C 75* ICM Pulsed Collector Current TC = 25°C 140 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 250 W RBSOA Reverse Bias Safe Operating Area TJ = 150°C 150A @ 550V * Specification of IGBT device but output current must be limited to 40A to not exceed a delta of temperature greater than 35°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Asymmetrical - Bridge Trench + Field Stop IGBT Power Module VCES = 600V IC = 75A* @ Tc = 80°C |
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