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APTGT75TL60T3G Datasheet(PDF) 6 Page - Microsemi Corporation |
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APTGT75TL60T3G Datasheet(HTML) 6 Page - Microsemi Corporation |
6 / 7 page APTGT75TL60T3G www.microsemi.com 6- 7 CR1 to CR4 Typical performance curve Energy losses vs Collector Current 0 0.5 1 1.5 0 2040 6080 100 IF (A) VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 0 0.2 0.4 0.6 0.8 1 1.2 5 15 253545 5565 Gate Resistance (ohms) VCE = 300V VGE =15V IC = 50A TJ = 150°C Switching Energy Losses vs Gate Resistance maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds Forward Characteristic of diode TJ=25°C TJ=150°C 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2 2.4 VF (V) |
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