APTGT100TL60T3G

www.microsemi.com

7- 7

CR5 & CR6 Typical performance curve

Energy losses vs Collector Current

0

1

2

3

4

0

25

50

75 100 125 150 175 200

0

0.5

1

1.5

2

2.5

3

0

5

10

15

20

25

30

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration in Seconds

Forward Characteristic of diode

0

25

50

75

100

125

150

175

200

0

0.4

0.8

1.2

1.6

2

2.4

Microsemi reserves the right to change, without notice, the specifications and information contained herein

Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

and foreign patents. U.S and Foreign patents pending. All Rights Reserved.