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T4312816A-8S Datasheet(PDF) 5 Page - Taiwan Memory Technology |
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T4312816A-8S Datasheet(HTML) 5 Page - Taiwan Memory Technology |
5 / 29 page TE CH tm Preliminary T4312816A TM Technology Inc. reserves the right P. 5 Publication Date: APR. 2003 to change products or specifications without notice. Revision: 0.B DC CHARACTERISTICS TA = 0 to 70 °C , VIH(min)/VIL(max)=2.0V/0.8V Speed version Parameter Symbol -6 -7 -7.5 -8 -10 Unit Test Condition Note Operating Current ( One Bank Active) ICC1 140 120 115 110 100 mA Burst Length = 1 tRC≥tRC(min) ,tCC≥tCC(min),IOL= 0 mA 1,3 ICC2P 2 CKE ≤ VIL(max),tCC=15ns Precharge Standby Current in power- down mode ICC2PS 2 mA CKE ≤ VIL(max),CLK ≤ VIL(max), tCC =∞ 3 ICC2N 20 CKE ≥ VIH(min), CS ≥ VIH(min),tCC=15ns Input signals are changed one time during 30ns Precharge Standby Current in non power-down mode ICC2NS 8 mA CKE ≥VIH(min),CLK ≤ VIL(min),tCC=∞ Input signals are stable 3 ICC3P 5 CKE ≤ VIL(max),tCC=15ns Active Standby Current in power- down mode ICC3PS 4 mA CKE ≤ VIL(max),CLK ≤ VIL(max),tCC=∞ 3 ICC3N 30 CKE ≥VIH(min), CS ≥VIH(min),tCC=15ns Input signals are changed one time during 30ns Active Standby Current in non power-down mode (One Bank Active) ICC3NS 20 mA CKE ≥VIH(min),CLK ≤ VIL(min),tCC=∞ Input signals are stable 3 150 130 125 120 110 CAS Latency 3 Operating Current (Burst Mode) ICC4 150 130 125 120 110 mA CAS Latency 2 IOL=0 mA,Page Burst All Band Activated tCCD= tCCD(min) 1,3 Refresh Current ICC5 150 130 125 120 110 mA tRC ≥tRC(min) 2,3 Self refresh Current ICC6 2 mA CKE ≤ 0.2V Note: 1. Measured with output open. Addresses are changed only one time during tCC(min) . 2. Refresh period is 64ms. Addresses are changed only one time during tCC(min) . 3. tCC : Clock cycle time. tRC : Row cycle time. tCCD : Column address to column address delay time. |
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