Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Symbol

Parameter

Min

Typ

Max

Unit

P

D

-

-

250

W

Junction to Case Thermal Resistance

IGBT

-

-

0.50

°C/W

Diode

1.0

Case to Sink Thermal Resistance, Flat Greased Surface

-

0.11

-

T

Operating and Storage Junction Temperature Range

-55

-

150

°C

T

L

Soldering Temperature for 10 Seconds (1.6mm from case)

-

-

300

W

T

Package Weight

-

0.22

-

oz

-

5.9

-

g

Symbol

Parameter

Rating

Unit

I

C1

54

A

I

C2

30

I

CM

113

V

GE

Gate-Emitter Voltage

±30V

V

SSOA

Switching Safe Operating Area

113

t

SC

10

µs

Single die

IGBT with

separate DL

Typical Applications

• ZVS Phase Shifted Bridge

• Resonant Mode Switching

• Phase Shifted Bridge

• Welding

• Induction heating

• High Frequency SMPS

Features

• Fast Switching with low EMI

• Very Low E

• Short circuit rated

• Low Gate Charge

• RoHS Compliant

• Tight parameter distribution

• Easy paralleling

• Low Forward Diode Voltage (VF)

• Ultrasoft Recovery Diode

approaching power MOSFET performance but lower cost.

immunity and low EMI. The short circuit duration rating of 10μs make these IGBT's suitable for motor

drive and inverter applications. Reliability is further enhanced by avalanche energy ruggedness. Combi

versions are packaged with a high speed, soft recovery DL series diode.

TO-247

APT30GS60BRDL(G)

G

C

E

G

C

E

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.

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