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APT44GA60B Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT44GA60B Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 6 page Absolute Maximum Ratings Thermal and Mechanical Characteristics Symbol Parameter Ratings Unit V ces Collector Emitter Voltage 600 V I C1 Continuous Collector Current @ T C = 25°C 78 A I C2 Continuous Collector Current @ T C = 100°C 44 I CM Pulsed Collector Current 1 130 V GE Gate-Emitter Voltage 2 ±30 V P D Total Power Dissipation @ T C = 25°C 337 W SSOA Switching Safe Operating Area @ T J = 150°C 130A @ 600V T J, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C T L Lead Temperature for Soldering: 0.063" from Case for 10 Seconds 300 Single die IGBT TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial FEATURES • Fast switching with low EMI • Very Low E off for maximum efficiency • Ultra low C res for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant APT44GA60B APT44GA60S 600V APT44GA60B POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off - V CE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of C res/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Symbol Characteristic Min Typ Max Unit R θJC Junction to Case Thermal Resistance - - .37 °C/W W T Package Weight - 5.9 - g Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 10 in·lbf Microsemi Website - http://www.microsemi.com High Speed PT IGBT Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit V BR(CES) Collector-Emitter Breakdown Voltage V GE = 0V, IC = 1.0mA 600 V V CE(on) Collector-Emitter On Voltage V GE = 15V, I C = 26A T J = 25°C 2.0 2.5 T J = 125°C 1.9 V GE(th) Gate Emitter Threshold Voltage V GE =VCE , IC = 1mA 3 4.5 6 I CES Zero Gate Voltage Collector Current V CE = 600V, V GE = 0V T J = 25°C 250 μA T J = 125°C 2500 I GES Gate-Emitter Leakage Current V GS = ±30V ±100 nA TO-247 D3PAK APT44GA60S |
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