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APT44GA60B Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APT44GA60B
Description  High Speed PT IGBT
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT44GA60B Datasheet(HTML) 1 Page - Microsemi Corporation

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Absolute Maximum Ratings
Thermal and Mechanical Characteristics
Symbol
Parameter
Ratings
Unit
V
ces
Collector Emitter Voltage
600
V
I
C1
Continuous Collector Current @ T
C = 25°C
78
A
I
C2
Continuous Collector Current @ T
C = 100°C
44
I
CM
Pulsed Collector Current 1
130
V
GE
Gate-Emitter Voltage 2
±30
V
P
D
Total Power Dissipation @ T
C = 25°C
337
W
SSOA
Switching Safe Operating Area @ T
J = 150°C
130A @ 600V
T
J, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
T
L
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
Single die IGBT
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• High power PFC boost
• Welding
• UPS, solar, and other inverters
• High frequency, high efficiency industrial
FEATURES
• Fast switching with low EMI
• Very Low E
off
for maximum efficiency
• Ultra low C
res
for improved noise immunity
• Low conduction loss
• Low gate charge
• Increased intrinsic gate resistance for low EMI
• RoHS compliant
APT44GA60B
APT44GA60S
600V
APT44GA60B
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low E
off is achieved
through leading technology silicon design and lifetime control processes. A reduced E
off -
V
CE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of C
res/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
Symbol
Characteristic
Min
Typ
Max
Unit
R
θJC
Junction to Case Thermal Resistance
-
-
.37
°C/W
W
T
Package Weight
-
5.9
-
g
Torque
Mounting Torque (TO-247 Package), 4-40 or M3 screw
10
in·lbf
Microsemi Website - http://www.microsemi.com
High Speed PT IGBT
Static Characteristics
TJ = 25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
V
BR(CES)
Collector-Emitter Breakdown Voltage
V
GE = 0V, IC = 1.0mA
600
V
V
CE(on)
Collector-Emitter On Voltage
V
GE = 15V,
I
C = 26A
T
J = 25°C
2.0
2.5
T
J = 125°C
1.9
V
GE(th)
Gate Emitter Threshold Voltage
V
GE =VCE , IC = 1mA
3
4.5
6
I
CES
Zero Gate Voltage Collector Current
V
CE = 600V,
V
GE = 0V
T
J = 25°C
250
μA
T
J = 125°C
2500
I
GES
Gate-Emitter Leakage Current
V
GS = ±30V
±100
nA
TO-247
D3PAK
APT44GA60S


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