APT50GN60BG datasheet(3/6 Pages) MICROSEMI

Part #	APT50GN60BG

Description	Resonant Mode Combi IGBT

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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TYPICAL PERFORMANCE CURVES

APT50GN60B_S(G)

250µs PULSE

TEST<0.5 % DUTY

CYCLE

15V

9V

8V

7V

10V

V

GE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(T

J

= 25°C)

FIGURE 2, Output Characteristics (T

J

= 125°C)

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics

FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage

FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C)

T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature

FIGURE 8, DC Collector Current vs Case Temperature

160

140

120

100

80

60

40

20

0

160

140

120

100

80

60

40

20

0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

1.10

1.05

1.00

0.95

0.90

200

180

160

140

120

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

3.0

2.5

2.0

1.5

1.0

0.5

0

140

120

100

80

60

40

20

0

13V

11V

12V

V

CE

= 120V

V

CE

=480V

0

1

2

3

4

5

0

5

10

15

20

25

30

0

2

4

6

8

10

12

14

0

50

100 150 200 250 300 350 400

8

10

12

14

16

0

25

50

75

100

125

150

175

-50 -25

0

25

50

75 100 125 150 175

-50 -25

0

25

50

75 100 125 150 175

V

CE

= 300V

I

C

= 50A

T

J

= 25°C

T

J = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 50A

I

C

= 100A

I

C

= 25A

I

C

= 100A

I

C

= 50A

I

C

= 25A

T

J = 125°C

T

J = 25°C

T

J = -55°C

T

J = 175°C

T

J = 125°C

T

J = 25°C

T

J = -55°C

T

J = 175°C

V

GE

= 15V

Lead Temperature

Limited

Lead Temperature

Limited

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