APT50GS60SR datasheet(2/7 Pages) MICROSEMI

Part #	APT50GS60SR

Description	Thunderbolt High Speed NPT IGBT

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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Symbols

Parameter

Test Conditions

Min

Typ

Max

Unit

gfs

Forward Transconductance

VCE = 50V, IC = 50A

-

31

-

S

Cies

Input Capacitance

VGE = 0V, VCE = 25V

f = 1MHz

-

2635

-

pF

Coes

Output Capacitance

-

240

-

Cres

Reverse Transfer Capacitance

-

145

-

Co(cr)

Reverse Transfer Capacitance

Charge Related 5

VGE = 0V

VCE = 0 to 400V

-

115

-

Co(er)

Reverse Transfer Capacitance

Current Related 6

85

Qg

Total Gate Charge

VGE = 0 to 15V

IC = 50A, VCE = 300V

-

235

-

nC

Qge

Gate-Emitter Charge

-

18

-

Ggc

Gate-Collector Charge

-

100

-

td(on)

Turn-On Delay Time

Inductive Switching IGBT and

Diode:

TJ = 25°C, VCC = 400V,

IC = 50A

RG = 4.7Ω 7, VGG = 15V

-

16

-

ns

tr

Rise Time

-

33

-

td(off)

Turn-Off Delay Time

-

225

-

tf

Fall Time

-

37

-

Eon1

Turn-On Switching Energy 8

-

TBD

-

mJ

Eon2

Turn-On Switching Energy 9

-

1.2

-

Eoff

Turn-Off Switching Energy 10

-

0.755

-

td(on)

Turn-On Delay Time

Inductive Switching IGBT and

Diode:

TJ = 125°C, VCC = 400V,

IC = 50A

RG = 4.7Ω 7, VGG = 15V

-

33

-

ns

tr

Rise Time

-

33

-

td(off)

Turn-Off Delay Time

-

250

-

tf

Fall Time

-

23

-

Eon1

Turn-On Switching Energy 8

-

TBD

-

mJ

Eon2

Turn-On Switching Energy 9

-

1.7

-

Eoff

Turn-Off Switching Energy 10

-

0.950

-

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VBR(CES)

Collector-Emitter Breakdown Voltage

VGE = 0V, IC = 250µA

600

-

V

VBR(ECS)

Emitter-Collector Breakdown Voltage

VGE = 0V, IC = 1A

-

25

-

∆V

BR(CES)/∆T

J

Breakdown Voltage Temperature Coeff

Reference to 25°C, I

C = 250µA

-

0.60

-

V/°C

VCE(ON)

Collector-Emitter On Voltage 4

VGE = 15V

IC = 50A

TJ = 25°C

-

2.8

3.15

V

TJ = 125°C

-

3.25

-

VEC

Diode Forward Voltage 4

IC = 50A

TJ = 25°C

-

2.15

-

TJ = 125°C

-

1.8

-

VGE(th)

Gate-Emitter Threshold Voltage

VGE = VCE, IC = 1mA

3

4

5

∆VGE(th)/∆TJ Threshold Voltage Temp Coeff

-

6.7

-

mV/°C

ICES

Zero Gate Voltage Collector Current

VCE = 600V,

VGE = 0V

TJ = 25°C

-

50

µA

TJ = 125°C

-

TBD

IGES

Gate-Emitter Leakage Current

VGE = ±20V

-

±100

nA

Static Characteristics

TJ = 25°C unless otherwise speciﬁed

Dynamic Characteristics

TJ = 25°C unless otherwise speciﬁed

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