APT50GT120LR datasheet(3/6 Pages) MICROSEMI

Part #	APT50GT120LR

Description	Thunderbolt IGBT

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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3 / 6 page

Typical Performance Curves

APT50GT120B2R_LR(G)

0

20

40

60

80

100

25

50

75

100

125

150

0

1

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150

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100

150

200 250 300 350

0

1

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0

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150

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0

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125

150

0

1015202530

5

0

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250μs PULSE

TEST<0.5 % DUTY

CYCLE

T

J = 25°C.

250μs PULSE TEST

<0.5 % DUTY CYCLE

V

GE = 15V.

250μs PULSE TEST

<0.5 % DUTY CYCLE

I

C = 25A

I

C = 50A

I

C = 100A

I

C = 25A

I

C = 50A

I

C = 100A

13V

8V

11V

7V

6V

15V

I

C = 50A

T

J = 25°C

V

CE = 960V

V

CE = 600V

V

CE = 240V

T

J= 25°C

T

J= -55°C

V

GE = 15V

T

J= 55°C

T

J= 150°C

V

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics (T

J

= 25°C)

T

J= 25°C

T

J= 125°C

V

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 2, Output Characteristics (T

J

= 25°C)

10V

9V

T

J= 125°C

V

CE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

V

GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage

GATE CHARGE (nC)

FIGURE 4, Gate charge

T

J, Junction Temperature (°C)

FIGURE 6, On State Voltage vs Junction Temperature

T

C, Case Temperature (°C)

FIGURE 8, DC Collector Current vs Case Temperature

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

-.50 -.25

0

25

50

75 100 125 150

T

J, JUNCTION TEMPERATURE

FIGURE 7, Threshold Voltage vs Junction Temperature

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APT50GT120LR Datasheet(PDF) 3 Page - Microsemi Corporation

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