Symbol

Parameter

Ratings

Unit

V

CES

Collector-Emitter Voltage

600

Volts

V

GE

Gate-Emitter Voltage

±30

I

C1

Continuous Collector Current @ T

148

Amps

I

C2

Continuous Collector Current @ T

80

I

CM

300

SSOA

Switching Safe Operating Area @ T

300A @ 600V

P

D

Total Power Dissipation

500

Watts

T

Operating and Storage Junction Temperature Range

-55 to 150

°C

Maximum Ratings

All Ratings: T

Symbol

Characteristic / Test Conditions

Min

Typ

Max

Unit

V

(BR)CES

Collector-Emitter Breakdown Voltage (V

600

-

-

Volts

V

GE(TH)

Gate Threshold Voltage (V

345

V

CE(ON)

Collector Emitter On Voltage (V

1.7

2.1

2.5

Collector Emitter On Voltage (V

-

2.5

-

I

CES

Collector Cut-off Current (V

2

--

25

μA

Collector Cut-off Current (V

2

-

-

1000

I

GES

Gate-Emitter Leakage Current (V

-

-

300

nA

Static Electrical Characteristics

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed

.

Microsemi Website - http://www.microsemi.com

APT100GT60B2R(G)

APT100GT60LR(G)

ness and ultrafast switching speed.

Features

• Low Forward Voltage Drop

• Low Tail Current

• Integrated Gate Resistor

Low EMI, High Reliability

• RoHS Compliant

• RBSOA and SCSOA Rated

• High Frequency Switching to 50KHz

• Ultra Low Leakage Current

G

C

E

G

C

E

G

C

E