APT100GT120JRDQ4 datasheet(3/9 Pages) MICROSEMI

Part #	APT100GT120JRDQ4

Description	Thunderbolt IGBT

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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Typical Performance Curves

APT100GT120JRDQ4

0

2

4

6

8

10

12

14

16

0

100 200

300

400 500

600 700

0

50

100

150

200

250

0

5

10

15

20

25

30

0

25

50

75

100

125

150

0

1

2

3

4

5

6

7

8

0

1

2

3

4

5

6

7

0

25

50

75

100

125

150

0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15 16

0

25

50

75

100

125

150

10

12

14

8

6

4

2

0

250µs PULSE

TEST<0.5 % DUTY

CYCLE

T

J = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

V

GE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C

= 50A

I

C

= 100A

I

C

= 200A

I

C

= 50A

I

C

= 100A

I

C

= 200A

13V

9V

12V

8V

7V

15V

I

C

= 100A

T

J

= 25°C

V

CE

= 960V

V

CE

= 600V

V

CE

= 240V

T

J= 25°C

T

J= -55°C

V

GE

= 15V

T

J= 150°C

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics (T

J = 25°C)

T

J= 25°C

T

J= 125°C

V

CE

, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 2, Output Characteristics (T

J = 25°C)

11V

10V

T

J= 125°C

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage

GATE CHARGE (nC)

FIGURE 4, Gate charge

T

J

, Junction Temperature (°C)

FIGURE 6, On State Voltage vs Junction Temperature

T

C

, Case Temperature (°C)

FIGURE 8, DC Collector Current vs Case Temperature

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

-.50 -.25

0

25

50

75 100 125 150

T

J

, JUNCTION TEMPERATURE

FIGURE 7, Threshold Voltage vs Junction Temperature

0

20

40

60

80

100

120

25

50

75

100

125

150

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