APT200GT60JRDQ4 datasheet(3/9 Pages) MICROSEMI

Part #	APT200GT60JRDQ4

Description	Thunderbolt IGBT

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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Typical Performance Curves

APT200GT60JRDQ4

0

50

100

150

200

250

25

50

75

100

125

150

0

1

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3

4

5

0

25

50

75

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125

150

0

1

2

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5

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12

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16

0

50

100

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0

2

4

6

8

10

12

0

50

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400

0

4

8

12

16

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28

32

0

25

50

75

100

125

150

175

200

225

250

0 0.5 1 1.5

2 2.5 3

3.5 4

4.5 5

250μs PULSE

TEST<0.5 % DUTY

CYCLE

T

J = 25°C.

250μs PULSE TEST

<0.5 % DUTY CYCLE

V

GE = 15V.

250μs PULSE TEST

<0.5 % DUTY CYCLE

I

C = 100A

I

C = 200A

I

C = 400A

I

C = 200A

I

C = 400A

12V

11V

5V

13/15V

T

J= 25°C

T

J= -55°C

V

GE = 15V

T

J= 55°C

T

J= 150°C

V

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics (T

J

= 25°C)

T

J= 25°C

T

J= 125°C

V

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 2, Output Characteristics (T

J

= 25°C)

T

J= 125°C

V

GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

V

GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage

GATE CHARGE (nC)

FIGURE 4, Gate charge

T

J, Junction Temperature (°C)

FIGURE 6, On State Voltage vs Junction Temperature

T

C, Case Temperature (°C)

FIGURE 8, DC Collector Current vs Case Temperature

-50 -25

0

25

50 75

100 125 150

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

T

J, JUNCTION TEMPERATURE

FIGURE 7, Threshold Voltage vs Junction Temperature

8V

9V

10V

I

C = 100A

0

5

10

15

20

0

250

500

750

1000

I

C = 200A

T

J = 25°C

V

CE = 480V

V

CE = 300V

V

CE = 120V

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